- semiconductor junctions
- • полупроводников преход
English-Bulgarian polytechnical dictionary . 2013.
English-Bulgarian polytechnical dictionary . 2013.
Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
semiconductor — /sem ee keuhn duk teuhr, sem uy /, n. 1. a substance, as silicon or germanium, with electrical conductivity intermediate between that of an insulator and a conductor: a basic component of various kinds of electronic circuit element (semiconductor … Universalium
junctions — junc·tion || dʒʌŋkʃn n. intersection; crossing; connection; point of convergence, meeting point, place where two things meet and cross (roads, rivers, etc.); interface in a semiconductor device (Electrical) … English contemporary dictionary
N-type semiconductor — N type semiconductors are a type of extrinsic semiconductor where the dopant atoms are capable of providing extra conduction electrons to the host material (e.g. phosphorus in silicon). This creates an excess of negative (n type) electron charge… … Wikipedia
Doping (semiconductor) — In semiconductor production, doping intentionally introduces impurities into an extremely pure (also referred to as intrinsic) semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of… … Wikipedia
p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… … Wikipedia
P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… … Wikipedia
Surface-barrier transistor — The surface barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy junction transistor and the earlier point contact transistor. Like the modern schottky transistor, it offered much higher speed than … Wikipedia
Walter Houser Brattain — Infobox Scientist name = Walter Brattain imagesize = 160px caption = Walter Houser Brattain (1902 1987) birth date = February 10, 1902 birth place = Amoy, China death date = October 13, 1987 death place = Seattle, Washington, USA nationality =… … Wikipedia
Thermoelectric effect — The thermoelectric effect is the direct conversion of temperature differences to electric voltage and vice versa. On the measurement scale of everyday life, a thermoelectric device creates a voltage when there is a different temperature on each… … Wikipedia